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Technology: Si
Unit Weight: 217 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 2 W
DC Current Gain hFE Max: 31
Collector- Base Voltage VCBO: 700 V
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 9
Collector- Emitter Voltage VCEO Max: 400 V
Collector-Emitter Saturation Voltage: 240 mV
