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WeEn Semiconductors WG30R135W1Q IGBT, 60 A, 1.7 V, 428 W, 1.35 kV, TO-247, 3 Pins | EMIN.COM.MM

IGBTs
WeEn Semiconductors WG30R135W1Q IGBT, 60 A, 1.7 V, 428 W, 1.35 kV, TO-247, 3 Pins

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WeEn Semiconductors WG30R135W1Q IGBT, 60 A, 1.7 V, 428 W, 1.35 kV, TO-247, 3 Pins

ManufacturerWeEn Semiconductors(View more products from this manufacturer)

ModelWG30R135W1Q

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No. of Pins: 3

Power Dissipation: 428 W

Transistor Mounting: Through Hole

Transistor Case Style: TO-247

Operating Temperature Max: 175 °C

Continuous Collector Current: 60 A

Collector Emitter Voltage Max: 1.35 kV

Collector Emitter Saturation Voltage: 1.7 V

Datasheet

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