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Fall Time: 9 ns
Rise Time: 9 ns
Technology: SiC
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Qg - Gate Charge: 26 nC
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 86 W
Vgs - Gate-Source Voltage: - 4 V, + 15 V
Typical Turn-On Delay Time: 8 ns
Typical Turn-Off Delay Time: 18 ns
Id - Continuous Drain Current: 21 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Forward Transconductance - Min: 5 S
Rds On - Drain-Source Resistance: 120 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 3.6 V
