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Technology: SiC
Unit Weight: 227 g
Configuration: Single
Mounting Style: Screw Mount
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vr - Reverse Voltage: 1.2 kV
Pd - Power Dissipation: 50 mW
Vgs - Gate-Source Voltage: - 4 V, + 15 V
Id - Continuous Drain Current: 450 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 3.7 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 3.6 V
