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Technology: SiC
Mounting Style: SMD/SMT
Qg - Gate Charge: 260 nC
Number of Channels: 1 Channel
Vgs - Gate-Source Voltage: - 4 V, + 15 V
Id - Continuous Drain Current: 149 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 71 S
Rds On - Drain-Source Resistance: 13 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 2.5 V
