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Fall Time: 7 ns, 17 ns
Rise Time: 4 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Qg - Gate Charge: 11 nC, 32 nC
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 2 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 7 ns, 12 ns
Typical Turn-Off Delay Time: 16 ns, 46 ns
Id - Continuous Drain Current: 2.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 7.5 S, 10 S
Rds On - Drain-Source Resistance: 150 mOhms, 160 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 3 V
