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Technology: Si
Unit Weight: 42 g
Configuration: CIB
Mounting Style: Screw Mount
Pd - Power Dissipation: 208 W
Gate-Emitter Leakage Current: 500 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 2.3 V
Continuous Collector Current at 25 C: 100 A
