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Technology: SiC
Unit Weight: 730 g
Mounting Style: Press Fit
Transistor Polarity: N-Channel
Pd - Power Dissipation: 704 W
Vgs - Gate-Source Voltage: - 10 V, + 22 V
Id - Continuous Drain Current: 485 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 2.05 mOhms
Vds - Drain-Source Breakdown Voltage: 750 V
Vgs th - Gate-Source Threshold Voltage: 1.9 V
