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STMicroelectronics BUL381D BJTs - Bipolar Transistors NPN Hi-Volt Fast Sw

Width: 4.6 mm

Height: 9.15 mm

Length: 10.4 mm

Technology: Si

Unit Weight: 6 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 70 W

Emitter- Base Voltage VEBO: 9 V

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 1.1 V

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