STMicroelectronics MJD122-1 Darlington Transistors NPN PWR Darlington Int Anti Collector
Manufacturer: STMicroelectronics Model: MJD122-1 - Contact
Width: 2.4 mm
Height: 7.2 mm
Length: 6.6 mm
Unit Weight: 340 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 20 W
DC Current Gain hFE Max: 12000
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 100 V
Maximum DC Collector Current: 5 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 100
Maximum Collector Cut-off Current: 10 uA
Collector- Emitter Voltage VCEO Max: 100 V
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