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Fall Time: 16 ns
Rise Time: 43 ns
Technology: SiC
Channel Mode: Enhancement
Configuration: Single
Qualification: AEC-Q101
Mounting Style: Through Hole
Qg - Gate Charge: 138 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 625 W
Vgs - Gate-Source Voltage: - 10 V, + 22 V
Typical Turn-On Delay Time: 20 ns
Typical Turn-Off Delay Time: 41 ns
Id - Continuous Drain Current: 110 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 15.8 mOhms
Vds - Drain-Source Breakdown Voltage: 900 V
Vgs th - Gate-Source Threshold Voltage: 3.1 V
