STMicroelectronics SCT055HU65G3AG SiC MOSFETS Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

Fall Time: 12.1 ns

Rise Time: 7.9 ns

Technology: SiC

Unit Weight: 2.320 g

Channel Mode: Enhancement

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Qg - Gate Charge: 29 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 185 W

Vgs - Gate-Source Voltage: - 10 V, + 22 V

Typical Turn-On Delay Time: 9.2 ns

Typical Turn-Off Delay Time: 14.2 ns

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 72 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4.2 V