STMicroelectronics SCT1000N170 SiC MOSFETS Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ 7 A
Manufacturer: STMicroelectronics Model: SCT1000N170 - Contact
Technology: SiC
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 14 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 120 W
Vgs - Gate-Source Voltage: - 10 V, + 25 V
Id - Continuous Drain Current: 6 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 1 Ohms
Vds - Drain-Source Breakdown Voltage: 1.7 kV
Vgs th - Gate-Source Threshold Voltage: 2.1 V
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