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STMicroelectronics SCT10N120H Silicon Carbide (SiC) MOSFETs & Modules | EMIN.COM.MM

Discrete & Power Modules
STMicroelectronics SCT10N120H Silicon Carbide (SiC) MOSFETs & Modules

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STMicroelectronics SCT10N120H Silicon Carbide (SiC) MOSFETs & Modules

ManufacturerSTMicroelectronics(View more products from this manufacturer)

ModelSCT10N120H

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Channel Type: N Channel

Power Dissipation: 130

Transistor Case Style: H2PAK

Drain Source Voltage Vds: 1.2

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 13

Mosfet Module Configuration: Single

Drain Source On State Resistance: 690

Gate Source Threshold Voltage Max: 3.5

Datasheet

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