STMicroelectronics SCTW40N120G2VAG SiC MOSFETS Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm
Manufacturer: STMicroelectronics Model: SCTW40N120G2VAG - Contact
Technology: SiC
Unit Weight: 4.500 g
Channel Mode: Enhancement
Qualification: AEC-Q101
Mounting Style: Through Hole
Qg - Gate Charge: 61 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 278 W
Vgs - Gate-Source Voltage: - 10 V, + 22 V
Id - Continuous Drain Current: 36 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 100 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 4.9 V
- Quality Engagement
- Easy change and return
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