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Gain: 18 dB
Technology: Si
Output Power: 200 W
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Number of Channels: 1 Channel
Operating Frequency: 1 GHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: - 8 V, + 10 V
Maximum Operating Temperature: + 200 C
Vds - Drain-Source Breakdown Voltage: 110 V
Vgs th - Gate-Source Threshold Voltage: 3 V
