STMicroelectronics STGB15H60DF IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 15 A high speed
Manufacturer: STMicroelectronics Model: STGB15H60DF - Contact
Technology: Si
Unit Weight: 2 g
Configuration: Single
Mounting Style: SMD/SMT
Pd - Power Dissipation: 115 W
Gate-Emitter Leakage Current: 250 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.6 V
Continuous Collector Current at 25 C: 30 A
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