STMicroelectronics STGP5H60DF IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A high speed
Manufacturer: STMicroelectronics Model: STGP5H60DF - Contact
Technology: Si
Unit Weight: 2 g
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 88 W
Continuous Collector Current: 5 A
Gate-Emitter Leakage Current: +/- 250 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 600 V
Continuous Collector Current Ic Max: 10 A
Collector-Emitter Saturation Voltage: 1.5 V
Continuous Collector Current at 25 C: 10 A
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