STMicroelectronics STGWA40HP65FB2 IGBT Transistors Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT
Manufacturer: STMicroelectronics Model: STGWA40HP65FB2 - Contact
Technology: Si
Unit Weight: 6.100 g
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 227 W
Gate-Emitter Leakage Current: 250 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 650 V
Continuous Collector Current Ic Max: 72 A
Collector-Emitter Saturation Voltage: 1.55 V
Continuous Collector Current at 25 C: 72 A
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