For full functionality of this site it is necessary to enable JavaScript.

STMicroelectronics STI47N60DM6AG MOSFETs Automotive-grade N-channel 600 V, 70 mOhm typ 36 A MDmesh DM6 Power MOSFET

Technology: Si

Channel Mode: Enhancement

Qualification: AEC-Q101

Mounting Style: Through Hole

Qg - Gate Charge: 55 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 250 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Id - Continuous Drain Current: 36 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 80 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4.75 V

  • Quality Engagement
  • Easy change and return
  • Delivery Avaliable
  • Favorable payment

Apply your mail to get promotion information