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Technology: Si
Unit Weight: 9.160 g
Mounting Style: Press Fit
Transistor Polarity: N-Channel
Pd - Power Dissipation: 113 W
Id - Continuous Drain Current: 17 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 170 mOhms
Vds - Drain-Source Breakdown Voltage: 600 V
