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Width: 4.6 mm
Height: 9.15 mm
Length: 10.4 mm
Fall Time: 60 ns
Rise Time: 80 ns
Technology: Si
Unit Weight: 2 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel Power MOSFET
Qg - Gate Charge: 135 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 26 ns
Typical Turn-Off Delay Time: 116 ns
Id - Continuous Drain Current: 80 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 50 S
Rds On - Drain-Source Resistance: 15 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 2 V
