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Technology: Si
Unit Weight: 214.314 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 2.8 W
Emitter- Base Voltage VEBO: 9 V
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
Collector- Emitter Voltage VCEO Max: 400 V
Collector-Emitter Saturation Voltage: 600 mV
