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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Type: Bipolar
Operating Frequency: 1.1 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 200 mW
Emitter- Base Voltage VEBO: 2.5 V
Continuous Collector Current: 25 mA
Maximum DC Collector Current: 50 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 25 at 2 mA, 1 V
Collector- Emitter Voltage VCEO Max: 15 V
