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Technology: Si
Unit Weight: 2 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 1.58 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 10 ns
Typical Turn-Off Delay Time: 25 ns
Id - Continuous Drain Current: 650 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Forward Transconductance - Min: 1 S
Rds On - Drain-Source Resistance: 140 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 500 mV
