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Central Semiconductor MPSA26 APM TIN/LEAD Darlington Transistors NPN 50Vcbo 50Vceo 10Vebo 100mA 125pF

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

Gain Bandwidth Product fT: 125 MHz

Emitter- Base Voltage VEBO: 10 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 10000 at 5 V, 100 mA

Collector- Emitter Voltage VCEO Max: 50 V

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