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Width: 3.9 mm
Height: 0 mm
Length: 4.9 mm
Technology: Si
Unit Weight: 72 mg
Configuration: Hex
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 10 GHz
Transistor Polarity: NPN
DC Current Gain hFE Max: 40 at 10 mA at 3 V
Gain Bandwidth Product fT: 10000 MHz (Typ)
Emitter- Base Voltage VEBO: 5.5 V
Collector- Base Voltage VCBO: 12 V
Continuous Collector Current: 30 mA
Maximum DC Collector Current: 30 mA
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
DC Collector/Base Gain hfe Min: 40
Collector- Emitter Voltage VCEO Max: 8 V
