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Gain: 14.2 dB
Technology: GaN
Unit Weight: 2 g
Output Power: 45 W
Configuration: Single
Mounting Style: Screw Mount
Transistor Type: GaN HEMT
Moisture Sensitive: Yes
Transistor Polarity: N-Channel
Maximum Operating Frequency: 2.5 GHz
Minimum Operating Frequency: 0 Hz
Id - Continuous Drain Current: 14 mA
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 340 mOhms
Vgs - Gate-Source Breakdown Voltage: 3 V
Vds - Drain-Source Breakdown Voltage: 160 V
Vgs th - Gate-Source Threshold Voltage: - 1.8 V
