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Gain: 16.2 dB
Technology: Si
Unit Weight: 0.001 mg
Output Power: 6.5 W
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Moisture Sensitive: Yes
Number of Channels: 4 Channel
Operating Frequency: 136 MHz to 941 MHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: + 12 V
Id - Continuous Drain Current: 4.7 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.15 V
