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Gain: 23 dB
Technology: Si
Unit Weight: 5.281 g
Output Power: 1.25 kW
Mounting Style: Screw Mount
Transistor Type: LDMOS FET
Moisture Sensitive: Yes
Number of Channels: 2 Channel
Operating Frequency: 1.8 MHz to 600 GHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 3.333 W
Vgs - Gate-Source Voltage: + 10 V
Id - Continuous Drain Current: 30 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Forward Transconductance - Min: 28 S
Vds - Drain-Source Breakdown Voltage: 133 V
Vgs th - Gate-Source Threshold Voltage: 2.7 V
