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Fall Time: 8.7 ns
Rise Time: 6.9 ns
Technology: GaN
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 5.2 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 159 W
Vgs - Gate-Source Voltage: - 10 V to 6.5 V
Typical Turn-On Delay Time: 5.9 ns
Typical Turn-Off Delay Time: 8 ns
Id - Continuous Drain Current: 27 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 98 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
