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Width: 5.3 mm
Height: 20.8 mm
Length: 16.1 mm
Fall Time: 68 ns
Rise Time: 89 ns
Technology: Si
Unit Weight: 6 g
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Transistor Type: D Series Power MOSFET
Qg - Gate Charge: 83 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 446 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 33 ns
Typical Turn-Off Delay Time: 79 ns
Id - Continuous Drain Current: 36 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 12.8 S
Rds On - Drain-Source Resistance: 130 mOhms
Vds - Drain-Source Breakdown Voltage: 500 V
Vgs th - Gate-Source Threshold Voltage: 5 V
