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Technology: Si
Unit Weight: 8 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 550 MHz
Transistor Polarity: NPN
Pd - Power Dissipation: 100 mW
DC Current Gain hFE Max: 200
Emitter- Base Voltage VEBO: 4 V
Operating Temperature Range: - 55 C to + 125 C
Collector- Base Voltage VCBO: 40 V
Continuous Collector Current: 20 mA
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 40
Collector- Emitter Voltage VCEO Max: 30 V
