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Technology: Si
Unit Weight: 12 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 8 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 150 mW
DC Current Gain hFE Max: 240
Emitter- Base Voltage VEBO: 3 V
Operating Temperature Range: - 55 C to + 125 C
Collector- Base Voltage VCBO: 20 V
Continuous Collector Current: 80 mA
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 120
Collector- Emitter Voltage VCEO Max: 12 V
