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Technology: Si
Unit Weight: 16 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 mW
Gate-Source Cutoff Voltage: - 1.5 V
Drain-Source Current at Vgs=0: 1.2 mA
Id - Continuous Drain Current: 14 mA
Vgs - Gate-Source Breakdown Voltage: - 30 V
Vds - Drain-Source Breakdown Voltage: 10 V
