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Gain: 14.9 dB
Technology: Si
Unit Weight: 50 mg
Output Power: 630 mW
Configuration: Single
Mounting Style: SMD/SMT
Operating Frequency: 530 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 3 W
Vgs - Gate-Source Voltage: + 25 V
Id - Continuous Drain Current: 1 A
Maximum Operating Temperature: + 150 C
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.9 V
