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Toshiba GT40QR21(STA1,E,D Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-3P(N) | EMIN.COM.MM

IGBTs
Toshiba GT40QR21(STA1,E,D Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-3P(N)

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Toshiba GT40QR21(STA1,E,D Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-3P(N)

ManufacturerToshiba(View more products from this manufacturer)

ModelGT40QR21(STA1,E,D

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No. of Pins: 3

Power Dissipation: 230

Transistor Mounting: Through Hole

Transistor Case Style: TO-3PN

Operating Temperature Max: 175 °C

Continuous Collector Current: 40

Collector Emitter Voltage Max: 1.2

Collector Emitter Saturation Voltage: 1.5

Datasheet

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