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Toshiba GT50JR22(STA1,E,S) TOSGT50JR22(STA1ES) IGBT FOR SOFT SWIT | EMIN.COM.MM

IGBTs
Toshiba GT50JR22(STA1,E,S) TOSGT50JR22(STA1ES) IGBT FOR SOFT SWIT

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Toshiba GT50JR22(STA1,E,S) TOSGT50JR22(STA1ES) IGBT FOR SOFT SWIT

ManufacturerToshiba(View more products from this manufacturer)

ModelGT50JR22(STA1,E,S)

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Power Dissipation: 230

Transistor Mounting: Through Hole

Transistor Case Style: TO-3PN

Operating Temperature Max: 175 °C

Continuous Collector Current: 50

Collector Emitter Voltage Max: 600

Collector Emitter Saturation Voltage: 1.55

Datasheet

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