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Width: 25.5 mm
Height: 9.1 mm
Length: 38.2 mm
Fall Time: 38 ns
Rise Time: 70 ns
Technology: Si
Unit Weight: 28 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 434 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 460 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 46 ns
Id - Continuous Drain Current: 53 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Forward Transconductance - Min: 42 S
Rds On - Drain-Source Resistance: 80 mOhms
Vds - Drain-Source Breakdown Voltage: 500 V
Vgs th - Gate-Source Threshold Voltage: 2 V
